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Physics, Semicondcutors, Materials Science

Electrical Signature of Ion-Implantation Induced Defects in n-Silicon in the Defect Cluster Regime Studied using DLTS and Isothermal Transient Spectroscopies


Journal article


Samarendra P. Singh, V. Rao, Y. N. Mohapatra, S. Rangan, S. Ashok
2002

Semantic Scholar DOI
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APA   Click to copy
Singh, S. P., Rao, V., Mohapatra, Y. N., Rangan, S., & Ashok, S. (2002). Electrical Signature of Ion-Implantation Induced Defects in n-Silicon in the Defect Cluster Regime Studied using DLTS and Isothermal Transient Spectroscopies.


Chicago/Turabian   Click to copy
Singh, Samarendra P., V. Rao, Y. N. Mohapatra, S. Rangan, and S. Ashok. “Electrical Signature of Ion-Implantation Induced Defects in n-Silicon in the Defect Cluster Regime Studied Using DLTS and Isothermal Transient Spectroscopies” (2002).


MLA   Click to copy
Singh, Samarendra P., et al. Electrical Signature of Ion-Implantation Induced Defects in n-Silicon in the Defect Cluster Regime Studied Using DLTS and Isothermal Transient Spectroscopies. 2002.


BibTeX   Click to copy

@article{samarendra2002a,
  title = {Electrical Signature of Ion-Implantation Induced Defects in n-Silicon in the Defect Cluster Regime Studied using DLTS and Isothermal Transient Spectroscopies},
  year = {2002},
  author = {Singh, Samarendra P. and Rao, V. and Mohapatra, Y. N. and Rangan, S. and Ashok, S.}
}