Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon

Journal article

P. Giri, Y. N. Mohapatra
2000

Cite

APA Click to copy
Giri, P., & Mohapatra, Y. N. (2000). Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon.

Chicago/Turabian Click to copy
Giri, P., and Y. N. Mohapatra. “Capacitance Transient Spectroscopy Models of Coupled Trapping Kinetics among Multiple Defect States: Application to the Study of Trapping Kinetics of Defects in Heavy-Ion-Damaged Silicon” (2000).

MLA Click to copy
Giri, P., and Y. N. Mohapatra. Capacitance Transient Spectroscopy Models of Coupled Trapping Kinetics among Multiple Defect States: Application to the Study of Trapping Kinetics of Defects in Heavy-Ion-Damaged Silicon. 2000.

BibTeX Click to copy

@article{p2000a,
  title = {Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon},
  year = {2000},
  author = {Giri, P. and Mohapatra, Y. N.}
}