APA   Click to copy
Giri, P., Dhar, S., Kulkarni, V. N., & Mohapatra, Y. N. (1996). Electrically active defects due to end-of-ion-range damage in silicon irradiated with MeV Ar+ ions.

Chicago/Turabian   Click to copy
Giri, P., S. Dhar, V. N. Kulkarni, and Y. N. Mohapatra. “Electrically Active Defects Due to End-of-Ion-Range Damage in Silicon Irradiated with MeV Ar+ Ions” (1996).

MLA   Click to copy
Giri, P., et al. Electrically Active Defects Due to End-of-Ion-Range Damage in Silicon Irradiated with MeV Ar+ Ions. 1996.

@article{p1996a,
  title = {Electrically active defects due to end-of-ion-range damage in silicon irradiated with MeV Ar+ ions},
  year = {1996},
  author = {Giri, P. and Dhar, S. and Kulkarni, V. N. and Mohapatra, Y. N.}
}