ynm

Physics, Semicondcutors, Materials Science

Time analyzed transient spectroscopy and multiple DX related emission centers in silicon doped AlxGa1−xAs


Journal article


S. Agarwal, Y. N. Mohapatra, Vijay A. Singh, R. Sharan
1995

Semantic Scholar DOI
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Cite

APA   Click to copy
Agarwal, S., Mohapatra, Y. N., Singh, V. A., & Sharan, R. (1995). Time analyzed transient spectroscopy and multiple DX related emission centers in silicon doped AlxGa1−xAs.


Chicago/Turabian   Click to copy
Agarwal, S., Y. N. Mohapatra, Vijay A. Singh, and R. Sharan. “Time Analyzed Transient Spectroscopy and Multiple DX Related Emission Centers in Silicon Doped AlxGa1−XAs” (1995).


MLA   Click to copy
Agarwal, S., et al. Time Analyzed Transient Spectroscopy and Multiple DX Related Emission Centers in Silicon Doped AlxGa1−XAs. 1995.


BibTeX   Click to copy

@article{s1995a,
  title = {Time analyzed transient spectroscopy and multiple DX related emission centers in silicon doped AlxGa1−xAs},
  year = {1995},
  author = {Agarwal, S. and Mohapatra, Y. N. and Singh, Vijay A. and Sharan, R.}
}